STL90N6F7 datasheet(3/14 Pages) STMICROELECTRONICS

部件名	STL90N6F7

功能描述	N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 14 page

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0 V

IDSS

Zero gate voltage

drain current

VGS = 0 V

VDS = 60 V

µA

IGSS

Gate-body leakage

current

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 10.5 A

0.0046

0.0054

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

1600

Coss

Output capacitance

880

Crss

Reverse transfer capacitance

Total gate charge

VDD = 30 V, ID = 21 A,

VGS = 10 V

Qgs

Gate-source charge

7.2

Qgd

Gate-drain charge

8.1

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 10.5 A,

RG = 4.7 Ω, VGS = 10 V

Rise time

17.6

td(off)

Turn-off delay time

24.4

Fall time

7.8

STL90N6F7

Electrical characteristics

DS10917 - Rev 3

page 3/14

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