DTC144T

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

www.unisonic.com.tw

QW-R206-066,B

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current

100

mA

SOT-523

150

mW

Collector Power Dissipation

SOT-23/SOT-323

200

mW

Junction Temperature

150

℃

Storage Temperature

-55~+150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

50

V

Collector-Emitter Breakdown Voltage

50

V

Emitter-Base Breakdown Voltage

5

V

Collector Cutoff Current

0.5

µA

Emitter Cutoff Current

0.5

µA

Collector-Emitter Saturation Voltage

0.3

V

DC Current Gain

100

250

600

Input Resistance

R1

32.9

47

61.1

kΩ

Transition Frequency

250

MHz

* Transition frequency of the device