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DTD114EL-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 DTD114EL-AE3-R
功能描述  NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

DTD114EL-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  DTD114EL-AE3-R Datasheet HTML 1Page - Unisonic Technologies DTD114EL-AE3-R Datasheet HTML 2Page - Unisonic Technologies DTD114EL-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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DTD114E
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-043,B
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATING
UNIT
Supply Voltage
VCC
50
V
Input Voltage
VIN
-10~+40
V
Output Current
IOUT
500
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (Ta=25°C, unless others specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN(OFF) VCC =5V, IOUT =100μA
0.5
Input Voltage
VIN(ON) VOUT =0.3V, IOUT =10mA
3
V
Output Voltage
VOUT(ON) IOUT/IIN =50mA/2.5mA
0.1
0.3
V
Input Current
IIN
VIN=5V
0.88
mA
Output Current
IOUT(OFF) VCC =50V, VIN =0V
0.5
μA
DC Current Gain
hFE
VOUT =5V, IOUT =50mA
56
Input Resistance
R1
7
10
13
kΩ
Resistance Ratio
R2/R1
0.8
1
1.2
Transition Frequency
fT
VCE =10V, IE =−50mA, f=100MHz
200
MHz
*Transition frequency of the device



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