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RMB2S 数据表(PDF) 2 Page - SMC Diode Solutions Co. LTD |
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RMB2S 数据表(HTML) 2 Page - SMC Diode Solutions Co. LTD |
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2 / 5 page ![]() Technical Data Data Sheet N1961, Rev. A China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com RMB2S THRU RMB6S * Pulse width < 300 µs, duty cycle < 2% Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 3. Thermal Resistance From Junction to Ambient Electrical Characteristics: Type number Symbol RMB2S RMB4S RMB6S Units Maximum instantaneous forward voltage drop (Note 1)@ IF = 0.4A VF 1.0 V Maximum DC reverse current TA = 25°C at rated DC blocking voltage TA = 125°C IR 5 100 µA Maximum reverse recovery time(Note 2) trr 150 nS Typical junction capacitance (per leg) Cj 13 pF Thermal-Mechanical Specifications: Type number Symbol RMB2S RMB4S RMB6S Units Typical thermal resistance RθJA 85 °C/W Operating junction and storage temperature range TJ,TSTG -55 to +150 °C Ratings and Characteristics Curves |
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