2SB1132

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R208-016,B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-40

V

Collector-Emitter Voltage

-32

V

Emitter-Base Voltage

-5

V

Collector Current

DC

-1

A

Collector Current (Single pulse, Pw=100ms)

PULSE

-2

A

SOT-89

0.5

W

Collector Power Dissipation

TO-252

1

W

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

-40

V

Collector Emitter Breakdown Voltage

-32

V

Emitter Base Breakdown Voltage

-5

V

Collector Cut-Off Current

-0.5

µA

Emitter Cut-Off Current

-0.5

µA

Collector-Emitter Saturation Voltage

-0.2

-0.5

V

DC Current Transfer Ratio

82

390

Transition Frequency

150

MHz

Output Capacitance

Cob

20

30

pF

Note: Measured using pulse current.

RANK

P

Q

R

RANGE

82-180

120-270

180-390