2SB1386-R-AB3-E-R datasheet(3/5 Pages) UTC

3 / 5 page

2SB1386

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

3 of 5

www.unisonic.com.tw

QW-R208-019,B

TYPICAL CHARACTERISTICS

-0.2

-2

-1m

Base to Emitter Voltage, VBE(V)

Collector Current vs. Base to Emitter

Voltage

-1m-2m-5m-0.01-0.02

200

Collector Current, Ic(A)

DC Current Gain vs. Collector Current(1)

100

-0.4 -0.6 -0.8

-1.4

-1.2

-1.0

-2m

-5m

-5

Collector to Emitter Voltage, VCE(V)

Collector Current vs. Collector to Emitter

Voltage

-1

-0.4

-0.8

-1.6

-2.0

-1.2

-2

-3

-4

IB =0mA

Ta=25℃

-10mA

-5mA

-0.05 -0.1-0.2

-0.5-1

500

Collector-Emitter Saturation Voltage vs.

Collector Current (1)

-10m

-30mA

-45mA

-50mA

-15mA

-20mA

-25mA

-2

-0.2

-0.05

-0.1

-0.5

-0.02

-0.01

Collector Current, Ic(A)

-1

-2

-20m

-50m

-100m

-200m

-500m

-1

-5

-10

VCE = -2V

Ta=25℃

Ta=100℃

Ta= -25℃

-40mA

-35mA

-5 -10

VcE= -5V

VcE= -2V

VcE= -1V

Ta=25℃

-1m-2m-5m-0.01-0.02

200

Collector Current, IC(A)

DC Current Gain vs. Collector Current(2)

100

-0.05 -0.1-0.2

-0.5-1

500

-2 -5 -10

VcE= -1V

Ta=100℃

-1m-2m-5m-0.01-0.02

200

Collector Current, Ic(A)

DC Current Gain vs. Collector Current

100

-0.05 -0.1-0.2

-0.5-1

500

-2 -5 -10

VcE= -2V

Ta=25℃

Ta= -25℃

Ta=100℃

Ta= -25℃

-2m -5m-0.01-0.02-0.05 -0.1 -0.5-1 -2 -5 -10

-0.2

-5

Ta=25℃

Ic/IB=50/1

40/1

30/1

10/1

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