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2SB1260L-R-AB3-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 2SB1260L-R-AB3-R
功能描述  POWER TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2SB1260L-R-AB3-R 数据表(HTML) 3 Page - Unisonic Technologies

  2SB1260L-R-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SB1260L-R-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SB1260L-R-AB3-R Datasheet HTML 3Page - Unisonic Technologies 2SB1260L-R-AB3-R Datasheet HTML 4Page - Unisonic Technologies  
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2SB1260
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
www.unisonic.com.tw
QW-R208-017,C
■
TYPICAL CHARACTERICS
0
-0.2
-1000
-0.1
Base to Emitter Voltage, VBE(V)
Grounded Emitter Propagation
Characteristics
-1 -2
-5 -10 -20
200
50
Collector Current, Ic(mA)
DC Current Gain vs. Collector
Current
100
-0.4 -0.6 -0.8
-1.6
-1.4
-1.2
-1.0
-1
-10
0
-1.0
0
Collector to Emitter Voltage, VCE(V)
Grounded Emitter Output
Characteristics
-0.2
-0.4
-0.8
-1.6
-2.0
-1.2
-0.4
-0.6
-0.8
IB =0mA
Ta=25℃
-0.15mA
-0.1mA
-0.05mA
-50-100-200-500-1000
500
1000
12
5 10 20
5
1
Emitter Current, IE (mA)
Collector-emitter Saturation Voltage
vs. Collector Current
2
50 100200 5001000
10
20
50
100
Collector to Base Voltage, VCB(V)
Collector Output Capacitance vs.
Collector -Base Voltage
-100
VCE = -5V
Ta=25℃
-0.2
-0.6
-1.0
-1.4
-1.8
-0.2mA
-0.25mA
-0.3mA
-0.35mA
-0.4mA
-0.45mA
20
10
-2000
VcE= -1V
VcE= -3V
Ta=25℃
-1 -2
-5 -10 -20
-0.2
-0.05
-0.1
-50-100-200-500-1000
-0.5
-0.02
-0.01
-2000
Collector Current, Ic(mA)
-1
-2
Ta=25℃
Ic/IB=20
10
200
500
1000
Ta=25℃
VCE = -5V
Gain Bandwidth Product vs. Emitter
Current
-0.1 -0.2 -0.5-1 -2
5
1
2
-5 -10 -20
-50 -100
10
20
50
100
200
500
Ta=25℃
f=1MHz
1000
IE=0A



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