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2SC5027E-R-TF3-T 数据表(PDF) 3 Page - Unisonic Technologies |
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2SC5027E-R-TF3-T 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() 2SC5027E NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R203-030,B ■ TYPICAL CHARACTERISTICS 4.0 3.6 0.0 0 Static Characteristic 12 34 5 6 7 8 9 10 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 IB=250 mA IB=200 mA IB=150 mA IB=100 mA IB=80mA IB=60mA IB=50mA IB=40mA IB=30mA IB=20mA IB=10mA IB=0mA 1ms 100us 1000 100 10 1 0.01 0.1 1 10 DC Current Gain VCE=5V Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter on Voltage Collectoer-Emitter Voltage, VCE (V) Collector Current, IC (A) Base-Emitter Voltage, VBE (V) Collector Current, IC (A) 1ms 100us 10 1 0.1 0.01 0.01 0.1 1 10 4.0 3.5 1.0 0.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 3.0 2.5 2.0 1.5 0.0 VCE=5V Ic=5IB 1ms 10 1 0.1 0.01 0.1 110 1E-s 1 10 100 1000 10000 100 10 1 0.1 0.01 IcMAX.(Continuous ) Vcc =400 V 5.IB1= - 2.5.I B2=Ic Collector-Emitter Voltage, VCE (V) Collector-Emitter Voltage, VCE (V) Switching Time Safe Operating Area IcMAX.(Pulse) |
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