2SD1816

NPN EPITAXIAL PLANAR TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R209-011,B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

120

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

6

V

DC

4

A

Collector Current

PULSE(Note 1)

8

A

1

W

Collector Power Dissipation

W

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note1: Duty=1/2, Pw=20ms

Note2: When mounted on a 40×40×0.7mm ceramic board

Note3: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector Base Breakdown Voltage

120

V

Collector Emitter Breakdown Voltage

100

V

Emitter Base Breakdown Voltage

6

V

Base-Emitter Saturation Voltage

0.9

1.2

V

Collector-Emitter Saturation Voltage

150

400

mV

Collector Cut-Off Current

1

µA

Emitter Cut-Off Current

1

µA

70

400

DC Current Transfer Ratio

40

Transition Frequency

180

MHz

Output Capacitance

40

pF

Turn-on Time

See test circuit

100

ns

Storage Time

See test circuit

900

ns

Fall Time

See test circuit

50

ns

RANK

R

S

T

Q

RANGE

100 - 200

140 - 280

200 - 400

70 -140

TEST CIRCUIT

INPUT

OUTPUT

50V

50

-5V

100µ

+

470µ

+

PW=20μS

Duty Cycle≒1%

Unit (resistance:Ω, capacitance: F)