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MMBTA42-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 MMBTA42-AE3-R
功能描述  HIGH VOLTAGE TRANSISTOR
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MMBTA42-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  MMBTA42-AE3-R Datasheet HTML 1Page - Unisonic Technologies MMBTA42-AE3-R Datasheet HTML 2Page - Unisonic Technologies MMBTA42-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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MMBTA42
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2
www.unisonic.com.tw
QW-R206-004.B
ABSOLUTE MAXIMUM RATINGS (T
a=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
Ic
500
mA
Power Dissipation
PD
350
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
ELECTRICAL CHARACTERISTICS (T
J =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
Ic=100
µA, I
E=0
300
V
Collector-Emitter Breakdown Voltage
BVCEO
Ic=1mA, IB=0
300
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100µA, Ic=0
6
V
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=20mA, IB=2mA
0.2
V
Base-Emitter Saturation Voltage
VBE(sat)
Ic=20mA, IB=2mA
0.90
V
Collector Cut-Off Current
ICBO
VCB=200V, IE=0
100
nA
Emitter Cut-Off Current
IEBO
VBE=6V, Ic=0
100
nA
DC Current Gain(note)
hFE
VCE=10V, Ic=1mA
VCE=10V, Ic=10mA
VCE=10V, Ic=30mA
80
80
80
300
Current Gain Bandwidth Product
fT
VCE=20V, Ic=10mA, f=100MHz
50
MHz
Collector Base Capacitance
Ccb
VCB=20V, IE=0, f=1MHz
3
pF



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