数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

MMBT2222AL-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 MMBT2222AL-AE3-R
功能描述  NPN GENERAL PURPOSE AMPLIFIER
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MMBT2222AL-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  MMBT2222AL-AE3-R Datasheet HTML 1Page - Unisonic Technologies MMBT2222AL-AE3-R Datasheet HTML 2Page - Unisonic Technologies MMBT2222AL-AE3-R Datasheet HTML 3Page - Unisonic Technologies MMBT2222AL-AE3-R Datasheet HTML 4Page - Unisonic Technologies MMBT2222AL-AE3-R Datasheet HTML 5Page - Unisonic Technologies MMBT2222AL-AE3-R Datasheet HTML 6Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
MMBT2222A
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R206-019,D
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
Ic
0.6
A
SOT-23
350
mW
Power Dissipation
SOT-523
PC
150
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-23
15
°C/W
Thermal Resistance, Junction to Ambient
SOT-523
θJA
833
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
IC=10µA, IE=0
75
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA, IB=0
40
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10µA, IC =0
6
V
Collector Cutoff Current
ICBO
VCB=60V, IE=0
VCB=60V, IE=0, Ta=150°C
0.01
10
µA
µA
Emitter Cutoff Current
IEBO
VEB=3.0V, IC=0
10
nA
Base Cutoff Current
IBL
VCE=60V, VEB(OFF)=3.0V
20
nA
Collector Cutoff Current
ICEO
VCE=60V, VEB(OFF)=3.0V
10
nA
ON CHARACTERISTICS
DC Current Gain
hFE
IC =0.1mA, VCE=10V
IC =1.0mA, VCE=10V
IC =10mA, VCE=10V
IC =10mA, VCE=10V, Ta= -55°C
IC =150mA, VCE=10V*
IC =150mA, VCE=1.0V*
IC =500mA, VCE=10V*
35
50
75
35
100
50
40
300
Collector-Emitter Saturation Voltage*
VCE(SAT)
IC =150mA, IB=15mA
IC =500mA, IB=50mA
0.3
1.0
V
V
Base-Emitter Saturation Voltage*
VBE(SAT)
IC =150mA, IB=15mA
IC =500mA, IB=50mA
0.6
1.2
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
Real Part of Common-Emitter High
Frequency Input Impedance
Re(hje)
IC=20mA, VCB=20V, f=300MHz
60
Ω
Transition Frequency
fT
IC =20mA, VCE=20V, f=100MHz
300
MHz
Output Capacitance
Cobo
VCB=10V, IE=0, f=100kHz
8.0
pF
Input Capacitance
Cibo
VEB=0.5V, IC=0, f=100kHz
25
pF
Collector Base Time Constant
rb'Cc
IC=20mA, VCB=20V, f=31.8MHz
150
pS
Noise Figure
NF
IC=100µA, VCE=10V, Rs=1.0kΩ
f=1.0kHz
4.0
dB



Html Pages

1 2 3 4 5 6


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com