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MMBT2222AL-AN3-R 数据表(PDF) 5 Page - Unisonic Technologies |
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MMBT2222AL-AN3-R 数据表(HTML) 5 Page - Unisonic Technologies |
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5 / 6 page ![]() MMBT2222A NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 5 of 6 www.unisonic.com.tw QW-R206-019,D TYPICAL CHARACTERISTICS Collector Current , IC (mA) 0.1 0.3 1 10 30 100 300 0 100 200 300 400 500 125℃ 25℃ -40℃ VCE=5V DC Current Gain vs. Collector Current Collector Current , IC (mA) 1 10 100 500 0.1 -40℃ β =10 Collector-Emitter Saturation Voltage vs . Collector Current 125℃ 25℃ 0.2 0.3 0.4 Collector Current , IC (mA) 110 100 500 0.4 β =10 Base-Emitter Saturation Voltage vs . Collector Current 0.6 0.8 1 125℃ 25℃ -40℃ Collector Current , IC (mA) 0.1 1 10 25 0.2 Base-Emitter on Voltage vs. Collector Current 1 0.4 0.6 0.8 125℃ 25℃ -40℃ VCE=5V Ambient Temperature , TA (℃) 75 125 150 0.1 Base-Emitter Saturation Voltage vs. Collector Current 100 50 25 1 10 100 500 VCB=40V Reverse Bias Voltage (V) 1100 4 Emitter Transition and Output Capacitance vs. Reverse Bias Voltage 10 0.1 f=1MHz Cte Cob 8 12 16 20 |
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