MMBT2907AL-AE3-6-R datasheet(2/6 Pages) UTC

2 / 6 page

MMBT2907A

PNP EPITAXIAL PLANAR TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R220-001,B

ABSOLUTE MAXIMUM RATING (NOET 1) (Ta=25℃ unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

VCEO

-60

Collector-Base Voltage

VCBO

-60

Emitter-Base Voltage

VEBO

-5

Collector Current-Continuous

-800

Operating Junction and Storage Temperature

TJ, TSTG

-55 ~ +150

℃

Note 1. These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.

. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-23

357

°C/W

Thermal Resistance Junction-Case

SOT-323

θJA

455

°C/W

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage*

BVCEO IC=-10mA, IB=0

Collector-Base Breakdown Voltage

BVCBO IC=-10μA, IE=0

-60

Emitter-Base Breakdown Voltage

BVEBO IE=-10μA , IC=0

Base Cutoff Current

VCB=-30V, VEB=-0.5V

Collector Cutoff Current

ICEX

VCE=-30V, VBE=-0.5V

VCB=-50V, IE=0

0.02

μA

Collector Cutoff Current

ICBO

VCB=-50V, IE=0, TA=150℃

μA

ON CHARACTERISTICS

IC=-0.1mA, VCE=-10V

IC=-1.0 mA, VCE=-10V

100

IC=-10 mA, VCE=-10V

100

IC=-150 mA, VCE=-10V*

100

300

DC Current Gain

hFE

IC=-500 mA, VCE=-10V*

IC=-150 mA, IB=-15mA

0.4

Collector-Emitter Saturation Voltage*

VCE(SAT)

IC=-500 mA, IB=-50mA

1.6

IC=-150 mA, IB=-15mA*

1.3

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-500 mA, IB=-50mA

2.6

SMALL SIGNAL CHARACTERISTICS

Current Gain – Bandwidth Product

IC=-50mA, VCE=-20V, f=100MHz

200

MHz

Output Capacitance

Cobo

VCB=-10V, IE=0, f=100kHz

Input Capacitance

Cibo

VEB=-2V, IC=0, f=100kHz

SWITCHING CHARACTERISTICS

Turn-on Time

tON

Delay Time

Rise Time

VCC=30V, IC=-150mA, IB1=-15mA

Turn-off Time

toff

100

Storage Time

Fall Time

VCC=6V, IC=-150mA,

IB1= IB2=-15mA

THERMAL CHARACTERISTICS

SOT-23

350

Total Device Dissipation

SOT-323

275

* Pulse Test: Pulse Width

≤ 300ms, Duty Cycle≤2.0%

Note: Device mounted on FR-4 PCB 1.6” x 1.6” x 0.06.”

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