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PN2222AL-AB3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 PN2222AL-AB3-R
功能描述  NPN GENERAL PURPOSE AMPLIFIER
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

PN2222AL-AB3-R 数据表(HTML) 2 Page - Unisonic Technologies

  PN2222AL-AB3-R Datasheet HTML 1Page - Unisonic Technologies PN2222AL-AB3-R Datasheet HTML 2Page - Unisonic Technologies PN2222AL-AB3-R Datasheet HTML 3Page - Unisonic Technologies PN2222AL-AB3-R Datasheet HTML 4Page - Unisonic Technologies PN2222AL-AB3-R Datasheet HTML 5Page - Unisonic Technologies PN2222AL-AB3-R Datasheet HTML 6Page - Unisonic Technologies  
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PN2222A
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R208-022,B
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
0.6
A
SOT-89
1.2
W
Total Device Dissipation
TO-92
PC
625
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (Ta=25℃, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-89
104
℃/W
Thermal resistance, junction to Ambient
TO-92
θ
JA
200
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
IC=10µA, IE=0
75
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA, IB=0
40
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10µA, IC=0
6
V
Collector Cut-off Current
ICEO
VCE=60V, VEB(OFF)=3.0V
10
nA
Collector Cut-Off Current
ICBO
VCB=60V, IE=0
VCB=60V,IE=0, Ta=150℃
0.01
10
µA
µA
Emitter Cut-Off Current
IEBO
VEB=3.0V, IC=0
10
nA
Base Cut-Off Current
IBL
VCE=60V, VEB(OFF)=3.0V
20
nA
ON CHARACTERISTICS
DC Current Gain
hFE
IC=0.1mA, VCE=10V
IC=1.0mA, VCE=10V
IC=10mA, VCE=10V
IC=10mA, VCE=10V, Ta=-55℃
IC=150mA, VCE=10V*
IC=150mA, VCE=1.0V*
IC=500mA, VCE=10V*
35
50
75
35
100
50
40
300
Collector-Emitter Saturation Voltage*
VCE(SAT)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
0.3
1.0
V
V
Base-Emitter Saturation Voltage*
VBE(SAT)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
0.6
1.2
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
IC=20mA, VCE=20V, f=100MHz
300
MHz
Output Capacitance
Cobo
VCB=10V, IE=0, f=100kHz
8.0
pF
Input Capacitance
Cibo
VEB=0.5V, IC=0, f=100kHz
25
pF
Collector Base Time Constant
rb'Cc
IC=20mA, VCB=20V, f=31.8MHz
150
pS
Noise Figure
NF
IC=100µA, VCE=10V, RS=1.0kΩ,
f=1.0kHz
4.0
dB
Real Part of Common-Emitter High
Frequency Input Impedance
Re(hje) IC=20mA, VCB=20V, f=300MHz
60
Ω



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