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TIP42CL-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 TIP42CL-TN3-R
功能描述  PNP EPITAXIAL PLANAR TRANSISTOR
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

TIP42CL-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  TIP42CL-TN3-R Datasheet HTML 1Page - Unisonic Technologies TIP42CL-TN3-R Datasheet HTML 2Page - Unisonic Technologies TIP42CL-TN3-R Datasheet HTML 3Page - Unisonic Technologies  
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TIP42C
PNP PLANAR TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R203-007.B
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-6
A
Collector Current (Pulse)
IC
-10
A
Base Current
IB
-2
A
TO-220
65
W
Collector Dissipation (Tc=25℃)
TO-252
PC
20
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Tc=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector Emitter Sustaining Voltage (*)
BVCEO
IC=-30mA, IB=0
-100
V
Collector Cutoff Current
ICEO
VCE=-60V, IB=0
-0.7
mA
Collector Cutoff Current
ICES
VCE=-100V, VEB=0
-400
µA
Emitter Cutoff Current
IEBO
VBE=-5V, IC=0
-1
mA
Collector-Emitter Saturation Voltage (*)
VCE(SAT) IC=-6A, IB=-600mA
-1.5
V
Base-Emitter on Voltage (*)
VBE(ON)
IC=-6A, VCE=-4V
-2.0
V
DC Current Gain (*)
hFE
IC=-300mA, VCE=-4V
IC=-3A, VCE=-4V
30
15
75
Current Gain Bandwidth Product
fT
VCE=-10V, IC=-500mA,
f=1MHz
3
MHz
* Pulse Test: PW≦300
µs, Duty Cycle≦2%



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