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2SC3647-AB3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 2SC3647-AB3-R
功能描述  HIGH-VOLTAGE SWITCHING APPLICATIONS
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2SC3647-AB3-R 数据表(HTML) 2 Page - Unisonic Technologies

  2SC3647-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SC3647-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SC3647-AB3-R Datasheet HTML 3Page - Unisonic Technologies 2SC3647-AB3-R Datasheet HTML 4Page - Unisonic Technologies  
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2SC3647
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R208-039,A
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
120
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
2
A
Collector Current (Pulse)
ICP
3
A
Collector Dissipation
PC
500
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
C-E Saturation Voltage
VCE(sat)
IC = 1A, IB = 100mA
0.13
0.4
V
B-E Saturation Voltage
VBE(sat)
IC = 1A, IB = 100mA
0.85
1.2
V
C-B Breakdown Voltage
V(BR)CBO
IC = 10µA, IE =0
120
V
C-E Breakdown Voltage
V(BR)CEO
IC = 1mA, RBE =∞
100
V
E-B Breakdown Voltage
V(BR)EBO
IE = 10µA, IC=0
6
V
Collector Cutoff Curent
ICBO
VCB = 100V, IE =0
100
nA
Emitter Cutoff Curent
IEBO
VEB = 4V, IC =0
100
nA
Output Capacitance
Cob
VCB = 10V, f =1MHz
16
pF
DC Current Gain
hFE
VCE = 5V, IC = 100mA
100
400
Turn-ON Time
tON
See specified Test Circuit.
80
ns
Storage Time
tSTG
See specified Test Circuit.
1000
ns
Fall Time
tF
See specified Test Circuit.
50
ns
Gain-Bandwidth Product
fT
VCE = 10V, IC = 100mA
120
MHz
■
CLASSIFICATION OF hFE
RANK
R
S
T
RANGE
100 ~ 200
140 ~ 280
200 ~ 400
■
SWITCHING TIME TEST CIRCUIT
PW=20μS
DC≤1%
IB1
RB
IB2
VR
50
+
100μ
-5V
INPUT
10IB1= -10IB2=IC=0.7A
Unit (Resistance:Ω, Capacitance:F )
470μ
+
50V
RL



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