2SC3648-AB3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SC3648

NPN EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

QW-R208-038,A

ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

180

Collector to Emitter Voltage

VCEO

160

Emitter to Base Voltage

VEBO

Collector Current

0.7

Collector Current (Pulse)

ICP

1.5

PC (Mounted on ceramic

board 250mm

2 ×0.8mm)

1.3

Collector Dissipation

500

Junction Temperature

150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

C-E Saturation Voltage

VCE(sat)

IC =250mA, IB =25mA

0.12

0.4

B-E Saturation Voltage

VBE(sat)

IC =250mA, IB =25mA

0.85

1.2

C-B Breakdown Voltage

V(BR)CBO

IC =10µA, IE =0

180

C-E Breakdown Voltage

V(BR)CEO

IC =1, RBE =∞

160

E-B Breakdown Voltage

V(BR)EBO

IE =10µA, IC=0

Collector Cutoff Curent

ICBO

VCB =120V, IE =0

0.1

µA

Emitter Cutoff Curent

IEBO

VEB =4V, IC =0

0.1

µA

Output Capacitance

Cob

VCB =10V, f =1MHz

DC Current Gain

hFE 1

hFE 2

VCE =5V, IC =100mA

VCE =5V, IC =10mA

100

400

Turn-on Time

tON

See specified Test circuit

Storage Time

tSTG

See specified Test circuit

1000

Fall Time

See specified Test circuit

Gain-Bandwidth Product

VCE =5V, IC =50mA

120

MHz

■

CLASSIFICATION OF hFE 1

RANK

RANGE

100 ~ 200

140 ~ 280

200 ~ 400

■

SWITCHING TIME TEST CIRCUIT

PW=20μS

DC≤1%

IB1

IB2

100μ

-5V

INPUT

20IB1= -20IB2=IC=300mA

Unit (Resistance:Ω, Capacitance:F )

470μ

100V

333

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