2SC4617

NPN EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

4

www.unisonic.com.tw

QW-R206-081,A

TYPICAL CHARACTERICS(cont.)

0.2

0.2

5 10

0.02

0.5

0.05

0.5

100

0.1

0.01

12

20

0.2

0.2

5 10

50

0.02

0.5

0.05

0.5

200

0.1

0.01

Collector-emitter saturation voltage vs.

collector current(Ι)

1

2

20

100

Ta = 100℃

25℃

50

Ta = 100℃

25℃

Collector-emitter saturation voltage vs.

collector current (Ⅱ)

500

-0.5

-5

-10

100

200

-1

-100

50

Gain bandwidth product vs. emitter current

-2

-20

-50

Ta = 25℃

10

0.2

5

10

50

2

20

0.5

5

1

12

20

Ta=25℃

f=1MHz

Collector output capacitance vs. collector-base voltage

Emitter input capacitance vs. emitter-base voltage

100

-0.2

-5

-10

20

200

-0.5

50

10

-1

-2

Ta=25℃

f=32MHZ

Base-collector time constant

vs. emitter current

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ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or

other param eters) listed in products specifications of any and all U T C products described or contained

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