2SC4672

NPN EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2

www.unisonic.com.tw

QW-R208-004.B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

60

V

Collector to Emitter Voltage

50

V

Emitter to Base Voltage

6

V

Collector Current

2

A

Collector Current (Pulse) (Note 1)

5

A

Collector Dissipation

500

mW

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

60

V

Collector-Emitter Breakdown Voltage

50

V

Emitter-Base Breakdown Voltage

6

V

Collector Cutoff Current

0.1

µA

Emitter Cutoff Current

0.1

µA

Collector-Emitter Saturation Voltage

0.1

0.35

V

DC Current Transfer Ratio

120

400

Transition Frequency

210

MHz

Output Capacitance

Cob

25

pF

Note 1: Measured using pulse current.

■

CLASSIFICATION OF hFE

RANK

A

B

RANGE

120 ~ 240

200 ~ 400

U T C assum es no responsibility for equipm ent failures that result from using products at v alues that

ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or

other param eters) listed in products specifications of any and all U T C products described or contained

herein. U T C products are not designed for use in life support appliances, dev ices or system s where

m alfunction of these products can be reasonably ex pected to result in personal injury. R eproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation

presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate

and reliable and m ay be changed without notice.