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2SD1609 数据表(PDF) 3 Page - Unisonic Technologies |
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2SD1609 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R204-008,A 0.1 1 10 100 1000 1000 10 Collector Current (mA) Current Gain & Collector Current 1 10 Reverse Biased Voltage(V) Capacitance& Reverse-Biased Voltage 10 100 1000 100 110 1000 Collector Current(mA) Saturation Voltage &Collector Current VCE =5V 100 VCE(sat) @Ic=10IB 0.1 1 10 100 1000 10000 100 Collector Current (mA) On Voltage & Collector Current 10 1000 1000 100 110 1000 Collector Current(mA) Cutoff Frequency &Collector Current 100 VBE(on) @VcE=5V VCE =5V 1 10 100 1000 Cob 0.1 10 1000 100 110 1000 Forward Voltage (V) Safe Operating Area 100 10000 PT =1ms PT =100ms PT =1s 1 |
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