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2SD965-R-TN3-K 数据表(PDF) 2 Page - Unisonic Technologies

部件名 2SD965-R-TN3-K
功能描述  LOW VOLTAGE HIGH CURRENT TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2SD965-R-TN3-K 数据表(HTML) 2 Page - Unisonic Technologies

  2SD965-R-TN3-K Datasheet HTML 1Page - Unisonic Technologies 2SD965-R-TN3-K Datasheet HTML 2Page - Unisonic Technologies 2SD965-R-TN3-K Datasheet HTML 3Page - Unisonic Technologies 2SD965-R-TN3-K Datasheet HTML 4Page - Unisonic Technologies  
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2SD965/A
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R209-007,B
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
40
V
2SD965
20
V
Collector-Emitter Voltage
2SD965A
VCEO
30
V
Emitter-Base Voltage
VEBO
7
V
SOT-89
500
mW
TO-92
750
mW
Collector Dissipation
TO-252
PC
1
W
Collector Current
IC
5
A
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100µA, IE=0
40
V
2SD965
20
V
Collector-Emitter
Breakdown Voltage
2SD965A
BVCEO
IC=1mA, IB=0
30
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10µA, IC=0
7
V
Collector Cut-off Current
ICBO
VCB=10V, IE=0
100
nA
Emitter Cut-off Current
IEBO
VEB=7V, IC=0
100
nA
VCE=2V, IC=1mA
200
VCE=2V, IC=0.5A
230
800
DC Current Gain(note)
hFE
VCE=2V, IC=2A
150
Collector-Emitter Saturation Voltage
VCE(SAT) IC=3A, IB= 0.1A
1
V
Current Gain Bandwidth Product
fT
VCE=6V, IC=50mA
150
MHz
Output Capacitance
Cob
VCB=20V, IE=0, f=1MHz
50
pF
CLASSIFICATION OF hFE2
RANK
Q
R
S
RANGE
230-380
340-600
560-800



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