2SB649A-B-AB3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SB649/A

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R204-006,D

ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-180

2SB649

-120

Collector-Emitter Voltage

2SB649A

VCEO

-160

Emitter-Base Voltage

VEBO

-5

Collector Current

-1.5

Collector Peak Current

lC(PEAK)

-3

TO-126/TO-126C

1.4

TO-92

Collector Power Dissipation

SOT-89

500

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector to Base Breakdown Voltage

BVCBO

IC=-1mA, IE=0

-180

2SB649

-120

Collector

Emitter

Breakdown

Voltage

2SB649A

BVCEO

IC=-10mA, RBE=∞

-160

Emitter to Base Breakdown Voltage

BVEBO

IE=-1mA, IC=0

-5

Collector Cut-off Current

ICBO

VCB=-160V, IE=0

-10

µA

hFE1

VCE=-5V, IC=-150mA (note)

320

2SB649

hFE2

VCE=-5V, IC=-500mA (note)

hFE1

VCE=-5V, IC=-150mA (note)

200

DC Current Gain

2SB649A

hFE2

VCE=-5V, IC=-500mA (note)

Collector-Emitter Saturation Voltage

VCE(SAT) Ic=-600mA, IB=-50mA

-1

Base-Emitter Voltage

VBE

VCE=-5V, IC=-150mA

-1.5

Current Gain Bandwidth Product

VCE=-5V,IC=-150mA

140

MHz

Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

Note: Pulse test.

CLASSIFICATION OF hFE

RANK

RANGE

60-120

100-200

160-320

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