DTC115E

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R206-055,B

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

50

V

Input Voltage

-10 ~ +40

V

20

Output Current

100

mA

SOT-23

200

mW

Power Dissipation

SOT-523

150

mW

Junction Temperature

+150

℃

Storage Temperature

-40 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

0.5

Input Voltage

3

V

Output Voltage

0.1

0.3

V

Input Current

0.15

mA

Output Current

0.5

µA

DC Current Gain

82

Input Resistance

R1

70

100

130

kΩ

Resistance Ratio

R2/R1

0.8

1

1.2

Transition Frequency

250

MHz

*Transition frequency of the device

EQUIVALENT CIRCUIT

IN

OUT

OUT

IN

GND

R1

R2

GND

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.