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BC817-40-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 BC817-40-AE3-R
功能描述  NPN GENERAL PURPOSE AMPLIFIER
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

BC817-40-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  BC817-40-AE3-R Datasheet HTML 1Page - Unisonic Technologies BC817-40-AE3-R Datasheet HTML 2Page - Unisonic Technologies BC817-40-AE3-R Datasheet HTML 3Page - Unisonic Technologies BC817-40-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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BC817
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2
www.unisonic.com.tw
QW-R206-025.B
ABSOLUTE MAXIMUM RATING(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
45
V
Collector-Base Voltage
VCES
50
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current -Continuous
IC
1.5
A
Power Dissipation
Derate above 25
°C
PD
350
2.8
mW
mW/
°C
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~+70℃ operating temperature range
and assured by design from –20℃~+85℃.
THERMAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
CHARACTERISTIC
SYMBOL
RATING (Note)
UNIT
Thermal Resistance, Junction to Ambient
θ
JA
350
°C/W
Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA, IB=0
45
V
Collector-Base Breakdown Voltage
V(BR)CES
IC=100µA,IE=0
50
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=10µA, Ic=0
5
V
Collector-Cutoff Current
ICBO
VCB=20V
VCB=20V,Ta=150°C
100
5
nA
µA
ON CHARACTERISTICS
hFE1*
Ic=100mA,VCE=1.0V
See Classification
DC Current Gain
hFE2
Ic=500mA, VCE=1.0V
40
Collector-Emitter Saturation Voltage
VCE(SAT)
Ic=500mA,IB=50Ma
0.7
V
Base-Emitter On Voltage
VBE(ON)
Ic=500mA, VCE=1.0V
1.2
V
CLASSIFICATION OF hFE1*
RANK
BC817-16
BC817-25
BC817-40
RANGE
100-250
160-400
250-600



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