DTC124E

NPN EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

3

www.unisonic.com.tw

QW-R206-045,B

■

TYPICAL CHARACTERICS

100 ℃

100

50

20

10

5

2

1

500m

200m

100m

Ta= - 40℃

Vo=-0.2V

1k

500

200

100

50

10

5

2

1

20

Vo=5V

Ta=100℃

-40℃

25℃

1

500m

200m

100m

50m

20m

10m

5m

2m

1m

T a=100℃

-40℃

25℃

0.5

1.0

1.5

2.0

2.5

3.0

Vcc=5V

25℃

Ta=100℃

-40℃

-25 ℃

0

Fig.1 Input voltage vs.output current

(ON characterristics)

Output Current :Io(A)

Fig.3 DC current gain vs.output current

Output Current :Io(A)

Fig.2 Output current vs Input voltage

.(OFF characterristics)

Fig.4Output voltage vs.output current

Output Current :Io(A)

200μ 500μ

2m

5m

10m 20m

50m

100m

1m

100μ

200μ 500μ

2m

5m

10m

20m

50m

100m

1m

100μ

200 μ 500μ

2m

5m

10m

20m

50m

100m

1m

100μ

10m

5m

2m

500μ

200μ

50μ

20μ

10μ

2μ

5μ

100μ

1m

1μ

U T C assum es no responsibility for equipm ent failures that result from using products at v alues that

ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or

other param eters) listed in products specifications of any and all U T C products described or contained

herein. U T C products are not designed for use in life support appliances, dev ices or system s where

m alfunction of these products can be reasonably ex pected to result in personal injury. R eproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation

presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate

and reliable and m ay be changed without notice.