Technical Data

Data Sheet N1313, Rev. A

 China - Germany - Korea - Singapore - United States 

 http://www.smc-diodes.com - sales@ smc-diodes.com 

SL34B

SL34B SCHOTTKY RECTIFIER

Characteristics

Symbol

Condition

Typ.

Max.

Units

Forward Voltage Drop*

VF1

@ 3A, Pulse, TJ = 25 C

0.46

0.50

V

VF2

@ 3A, Pulse, TJ = 125℃

0.43

0.45

V

Reverse Current*

IR1

@VR = rated VR, TJ = 25℃

0.05

1.0

mA

IR2

@VR = rated VR, TJ = 125℃

9

55

mA

Junction Capacitance

Cj

@VR = 5.0 V, Tc=25℃

fSIG = 1MHz

130

250

pF

Series Inductance

LS

Measured lead to lead 5 mm from

package body

8.0

-

nH

Voltage Rate of Change

dv/dt

-

-

10,000

V/s

* Pulse width < 300 µs, duty cycle < 2%

Features

Circuit Diagram

Applications

Maximum Ratings:

Characteristics

Symbol

Condition

Max.

Units

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

-

40

V

Average Rectified Forward Current

IF (AV)

50% duty cycle @Tc=105°C, rectangular

wave form

3

A

Peak One Cycle Non-Repetitive

Surge Current

IFSM

8.3ms, Half Sine pulse, Tc = 25 C

70

A

Electrical Characteristics:



Switching power supply



Converters



Free-Wheeling diodes



Reverse battery protection



Schottky Barrier Chip



Guard Ring Die Construction for Transient Protection



High Current Capability



Low Power Loss, High Efficiency



High Surge Current Capability



For Use in Low Voltage, High Frequency Inverters,

Free Wheeling, and Polarity Protection Applications



This is a Pb − Free Device



All SMC parts are traceable to the wafer lot



Additional testing can be offered upon request

SMB