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81N20-R-AB3-I-R 数据表(PDF) 6 Page - Unisonic Technologies

部件名 81N20-R-AB3-I-R
功能描述  VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME
PDF  15 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

81N20-R-AB3-I-R 数据表(HTML) 6 Page - Unisonic Technologies

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81CXXX/81NXXX
CMOS IC
UNISONICTECHNOLOGIESCO.,LTD
6 of 15
www.unisonic.com.tw
QW-R502-039,I
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (4.0V ~ 4.9V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Detect Voltage
VDF
1
VDF (T)
X0.98
VDF (T)
VDF (T)
X1.02
V
Hysteresis Range
VHYS
1
VDF
X0.02
VDF
X0.05
VDF
X0.08
V
Operating Voltage
VIN
1
VDF=1.6V ~ 6.0V
0.7
10.0
V
VIN=4.0V
1.5
3.8
µA
Supply Current
ISS
2
VIN=5.0V
2.0
4.2
µA
3
N-ch
VDS=0.5V, VIN=4.0V
11.5
mA
Output Current
IOUT
4
P-ch
VDS=2.1V, VIN=8.0V
(CMOS output)
-15.4
mA
VDF
Temperature Characteristics
∆VDF
∆TOPR×VDF
±100
ppm/℃
Transient Delay Time
(VDR
VOUT inversion)
tDLY *
5
VIN changes from
0.6V ~ 10V
50
200
ms
Detection voltage (5.0V)
PARAMETER
SYMBOL CIRCUIT
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Detect Voltage
VDF
1
VDF (T)
X0.98
VDF (T)
VDF (T)
X1.02
V
Hysteresis Range
VHYS
1
VDF
X0.02
VDF
X0.05
VDF
X0.08
V
Operating Voltage
VIN
1
VDF=1.6V ~ 6.0V
0.7
10.0
V
Supply Current
ISS
2
VIN=5.0V
2.0
4.2
µA
3
N-ch VDS=0.5V, VIN =5.0V
13.0
mA
Output Current
IOUT
4
P-ch
VDS=2.1V, VIN=8.0V
(CMOS output)
-15.4
mA
VDF
Temperature Characteristics
∆VDF
∆TOPR×VDF
±100
ppm/℃
Transient Delay Time
(VDR
VOUT inversion)
tDLY *
5
VIN changes from
0.6V ~ 10V
50
200
ms
VDF (T): established detect voltage value
Release Voltage: VDR = VDF + VHYS
* Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2 µA greater than it is
after that period (completion of release operation) because of delay circuit through current.



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