DTA115E

PNP EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2

www.unisonic.com.tw

QW-R220-016,A

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

-50

V

Input Voltage

-40~+10

V

-20

Output Current

-100

mA

Power Dissipation

200

mW

Junction Temperature

150

℃

Storage Temperature

-40 ~ +150

℃

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

-0.5

Input Voltage

-3

V

Output Voltage

-0.1

-0.3

V

Input Current

-0.15

mA

Output Current

-0.5

μA

DC Current Gain

82

Input Resistance

70

100

130

kΩ

Resistance Ratio

0.8

1

1.2

Transition Frequency

250

MHz

*Transition frequency of the device

U T C assum es no responsibility for equipm ent failures that result from using products at v alues that

ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or

other param eters) listed in products specifications of any and all U T C products described or contained

herein. U T C products are not designed for use in life support appliances, dev ices or system s where

m alfunction of these products can be reasonably ex pected to result in personal injury. R eproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation

presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate

and reliable and m ay be changed without notice.