STS4DNFS30L datasheet(3/12 Pages) STMICROELECTRONICS

部件名	STS4DNFS30L

功能描述	N-channel 30V - 0.044ohm - 4A SO-8 STripFET TM MOSFET plus SCHOTTKY rectifier

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STS4DNFS30L

Electrical ratings

3/12

Electrical ratings

Table 2.

Schottky absolute maximum ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (vgs = 0)

VDGR

Drain-gate voltage (RGS = 20 kΩ)30

VGS

Gate- source voltage

±16

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

2.5

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25°C dual operation

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse

voltage

IF(RMS)

RMS forward current

IF(AV)

Average forward current

TL=125°C

δ=0.5

IFSM

Surge non repetitive forward

current

tp = 10 ms

Sinusoidal

IRRM

Repetitive peak reverse current

tp = 2

µs

F=1 kHz

IRSM

Non repetitive peak reverse

current

tp = 100

µs1

dv/dt

Critical rate of rise of reverse

voltage

10000

µs

Table 3.

Thermal data

Rthj-a

Thermal resistance junction-ambient

MOSFET(1)

Mounted on FR-4 board (steady state)

62.5

°C/W

Junction temperature

-55 to 150

°C

Tstg

Storage temperature range

-55 to 150

°C

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