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STS15N4LLF3 数据表(PDF) 4 Page - STMicroelectronics

部件名 STS15N4LLF3
功能描述  N-channel 40V - 0.0042ohm - 15A - SO-8 STripFET TM Power MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS15N4LLF3 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STS15N4LLF3
4/12
2
Electrical characteristics
(TJ = 25 °C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
40
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS =max rating @125°C
10
100
µA
µA
IGSS
Gate body leakage
Current (VDS = 0)
VGS = ±16V
±
200
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
1
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 7.5A
VGS= 4.5V, ID= 7.5A
0.0042
0.005
0.005
0.007
Ω
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f=1 MHz,
VGS= 0
2530
574
29
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 20V, ID = 15A
VGS = 4.5V
(see Figure 13)
21.5
6.9
8.2
28
nC
nC
nC
RG
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
13
5
Ω
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 20V, ID = 7.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 15)
17
25
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 20V, ID = 7.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 15)
62
9
ns
ns



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