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BY8010 数据表(PDF) 4 Page - NXP Semiconductors

部件名 BY8010
功能描述  Fast high-voltage soft-recovery controlled avalanche rectifiers
PDF  10 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BY8010 数据表(HTML) 4 Page - NXP Semiconductors

  BY8010 Datasheet HTML 1Page - NXP Semiconductors BY8010 Datasheet HTML 2Page - NXP Semiconductors BY8010 Datasheet HTML 3Page - NXP Semiconductors BY8010 Datasheet HTML 4Page - NXP Semiconductors BY8010 Datasheet HTML 5Page - NXP Semiconductors BY8010 Datasheet HTML 6Page - NXP Semiconductors BY8010 Datasheet HTML 7Page - NXP Semiconductors BY8010 Datasheet HTML 8Page - NXP Semiconductors BY8010 Datasheet HTML 9Page - NXP Semiconductors Next Button
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1996 May 24
4
Philips Semiconductors
Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
BY8000 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 100 mA; Tj =Tj max;
see Figs 9 to 15
BY8004
−−
20
V
BY8006
−−
25
V
BY8008
−−
30
V
BY8010
−−
38
V
BY8012
−−
50
V
BY8014
−−
55
V
BY8016
−−
63
V
IR
reverse current
VR =VRWmax; Tj = 120 °C
−−
3
µA
Qr
recovery charge
when switched from IF = 100 mA to
VR ≥ 100 V and dIF/dt = −200 mA/µs;
see Fig.16
−−
1nC
tf
fall time
when switched from IF = 100 mA to
VR ≥ 100 V and dIF/dt = −200 mA/µs;
see Fig.16
80
−−
ns
trr
reverse recovery time
when switched from IF = 2 mA to
IR = 4 mA; measured at IR = 1 mA;
see Fig.17
−−
100
ns
Cd
diode capacitance
VR =0V; f=1MHz
BY8004
0.90
pF
BY8006
0.65
pF
BY8008
0.55
pF
BY8010
0.45
pF
BY8012
0.35
pF
BY8014
0.30
pF
BY8016
0.25
pF



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