STD12NF06LT4 datasheet(3/19 Pages) STMICROELECTRONICS

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Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 250 µA

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 60 V

µA

VGS = 0 V, VDS = 60 V,

Tcase = 125 °C(1)

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±16 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 6 A

mΩ

VGS = 5 V, ID = 6 A

100

1. Defined by design, not subject to production test.

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

350

Coss

Output capacitance

Crss

Reverse transfer capacitance

Total gate charge

VDD = 48 V, ID = 12 A,

VGS = 0 to 5 V

(see Figure 13. Test circuit for gate

charge behavior)

7.5

Qgs

Gate-source charge

2.5

Qgd

Gate-drain charge

3.0

Table 5. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 6 A,

RG = 4.7 Ω, VGS = 4.5 V

(see Figure 12. Test circuit for

resistive load switching times and

Figure 17. Switching time

waveform)

Rise time

td(off)

Turn-off delay time

Fall time

Table 6. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

STD12NF06LT4

Electrical characteristics

DS10434 - Rev 3

page 3/19

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