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BYG80D 数据表(PDF) 13 Page - NXP Semiconductors |
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BYG80D 数据表(HTML) 13 Page - NXP Semiconductors |
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13 / 20 page ![]() 1997 Nov 25 13 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series handbook, halfpage MGC549 0 100 200 103 102 10 1 ( µA) IR Tj (°C) Fig.25 Reverse current as a function of junction temperature; maximum values. BYG80F to J VR =VRMMmax. Fig.26 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. (1) BYG80A to D (2) BYG80F and G (3) BYG80J handbook, halfpage 102 10 Cd (pF) 1 MGL078 1 (1) 10 VR (V) 103 102 (2) (3) Fig.27 Printed-circuit board for surface mounting. Dimensions in mm. MSB213 4.5 2.5 1.25 50 50 handbook, halfpage 10% 100% dI dt t trr IF IR MGC499 F dI dt R Fig.28 Reverse recovery definitions. |
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