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STTH8L06D 数据表(PDF) 4 Page - STMicroelectronics |
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STTH8L06D 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Characteristics STTH8L06 4/10 Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 10. Transient peak forward voltage versus dIF/dt (typical values) 0.00 0.25 0.50 0.75 1.00 1.25 25 50 75 100 125 IRM QRR S factor T (°C) j I 2 x I Reference: T =125°C F F(AV) j ≤ V =400V R 0 1 2 3 4 5 6 7 0 20 40 60 80 100 120 140 160 180 200 V (V) FP dI /dt(A/µs) F I=I T =125°C F F(AV) j Figure 11. Forward recovery time versus dIF/dt (typical values) Figure 12. Junction capacitance versus reverse voltage applied (typical values) Figure 13. Thermal resistance junction to ambient versus copper surface under tab (epoxy FR4, eCU = 35 µm) (D2PAK) 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 t (ns) fr dI /dt(A/µs) F I=I T =125°C F F(AV) j V =1.1 x V max. FR F 1 10 100 1000 1 10 100 1000 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 S(Cu)(cm²) R (°C/W) th(j-a) |
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