T1235H_06 datasheet(2/8 Pages) STMICROELECTRONICS

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T1235H

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Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Table 5: Static Characteristics

Table 6: Thermal resistance

Symbol

Test Conditions

Quadrant

Value

Unit

IGT (1)

VD = 12 V RL = 33 Ω

I - II - III

MAX.

VGT

I - II - III

MAX.

1.3

VGD

VD = VDRM RL = 3.3 kΩ Tj = 150°C

I - II - III

MIN.

0.15

IH (2)

IT = 100 mA

MAX.

IG = 1.2 IGT

I - III

MAX.

dV/dt (2)

VD = 67 %VDRM gate open Tj = 150°C

MIN.

300

V/µs

(dI/dt)c (2) Without snubber

Tj = 150°C

MIN.

5.3

A/ms

Symbol

Test Conditions

Value

Unit

VT (2)

ITM = 17 A

tp = 380 µs

Tj = 25°C

MAX.

1.55

Vto (2)

Threshold voltage

Tj = 150°C

MAX.

0.80

Rd (2)

Dynamic resistance

Tj = 150°C

MAX.

Ω

IDRM

IRRM

VDRM = VRRM

Tj = 25°C

MAX.

5µA

Tj = 150°C

5.5

VDRM/VRRM = 400V

(at mains peak voltage)

Tj = 150°C

3.5

Note 1: minimum IGT is guaranted at 10% of IGT max.

Note 2: for both polarities of A2 referenced to A1.

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

D2PAK

1.2

°C/W

TO-220AB

Rth(j-a)

Junction to ambient

S = 1 cm²

D2PAK

°C/W

TO-220AB

S = Copper surface under tab.

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