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ISF1017 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 ISF1017
功能描述  SiC N-Channel MOSFET
PDF  7 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISF1017 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISF1017 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISF1017 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISF1017 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISF1017 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISF1017 Datasheet HTML 5Page - Inchange Semiconductor Company Limited ISF1017 Datasheet HTML 6Page - Inchange Semiconductor Company Limited ISF1017 Datasheet HTML 7Page - Inchange Semiconductor Company Limited  
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ISF1017
SiC N-Channel MOSFET
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 0.25mA
900
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID = 0.25mA
2.0
--
4.0
V
RDS(on)
Drain-Source On-stage Resistance
VGS= 20V; ID= 40A
--
31
38
mΩ
VGS= 18V; ID= 40A
--
35
42
VGS= 15V; ID= 40A
--
43
52
IGSS
Gate Source Leakage Current
VGS= 20V; VDS= 0V
--
--
10
uA
IDSS
Zero Gate Voltage Drain Current
VDS = 900V, VGS = 0V
--
--
1.0
uA
RG
Gate resistance
VGS=0V,
VAC=25mV,f=1.0MHZ
--
2.4
--
Ω
Ciss
Input Capacitance
VGS = 0V,
VDS = 900V,
f = 1.0MHz
VAC=25mV
--
2352
--
pF
Coss
Output Capacitance
--
155
--
Crss
Reverse Transfer Capacitance
--
23
--
Qg
Total Gate Charge
VGS= -3/+18V,
VDS= 400V,
ID=80A
--
162
--
nC
Qgs
Gate-Source Charge
--
6.6
--
Qgd
Gate-Drain Charge
--
45
--
td(on)
Turn-on Delay Time
VGS= -3/+18V,
ID=40A,
VDS=400V,
RG=25Ω,
--
57
--
ns
tr
Turn-on Rise Time
--
143
--
td(off)
Turn-off Delay Time
--
225
--
tf
Turn-off Fall Time
--
171
--



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