BYV36 datasheet(3/14 Pages) PHILIPS

3 / 14 page

1996 Jul 01

Philips Semiconductors

Product speciﬁcation

Fast soft-recovery

controlled avalanche rectiﬁers

BYV36 series

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

IFRM

repetitive peak forward current

Ttp =60 °C; see Figs 8; 9 and 10

BYV36A to C

−

BYV36D and E

−

BYV36F and G

−

IFRM

repetitive peak forward current

Tamb =60 °C; see Figs 11; 12 and 13

BYV36A to C

−

BYV36D and E

−

BYV36F and G

−

IFSM

non-repetitive peak forward current

t = 10 ms half sine wave; Tj =Tj max

prior to surge; VR =VRRMmax

−

ERSM

non-repetitive peak reverse

avalanche energy

L = 120 mH; Tj =Tj max prior to surge;

inductive load switched off

−

Tstg

storage temperature

−65

+175

°C

junction temperature

see Figs 17 and 18

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF = 1 A; Tj =Tj max;

see Figs 19; 20 and 21

BYV36A to C

−−

1.00

BYV36D and E

−−

1.05

BYV36F and G

−−

1.05

forward voltage

IF =1A;

see Figs 19; 20 and 21

BYV36A to C

−−

1.35

BYV36D and E

−−

1.45

BYV36F and G

−−

1.45

V(BR)R

reverse avalanche breakdown

voltage

IR = 0.1 mA

BYV36A

300

−−

BYV36B

500

−−

BYV36C

700

−−

BYV36D

900

−−

BYV36E

1100

−−

BYV36F

1300

−−

BYV36G

1500

−−

reverse current

VR =VRRMmax; see Fig.22

−−

µA

VR =VRRMmax;

Tj = 165 °C; see Fig.22

−−

150

µA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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