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BYV42F 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BYV42F
功能描述  Rectifier diodes ultrafast, rugged
PDF  7 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BYV42F 数据表(HTML) 2 Page - NXP Semiconductors

  BYV42F Datasheet HTML 1Page - NXP Semiconductors BYV42F Datasheet HTML 2Page - NXP Semiconductors BYV42F Datasheet HTML 3Page - NXP Semiconductors BYV42F Datasheet HTML 4Page - NXP Semiconductors BYV42F Datasheet HTML 5Page - NXP Semiconductors BYV42F Datasheet HTML 6Page - NXP Semiconductors BYV42F Datasheet HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
BYV42F, BYV42EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
Ω
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
SOT186A package; f = 50-60 Hz;
-
2500
V
three terminals to external
sinusoidal waveform; R.H.
≤ 65%;
heatsink
clean and dustfree
V
isol
Repetitive peak voltage from all
SOT186 package; R.H.
≤ 65%;
-
1500
V
three terminals to external
clean and dustfree
heatsink
C
isol
Capacitance from pin 2 to
f = 1 MHz
-
10
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
both diodes conducting
heatsink
with heatsink compound
-
-
4.0
K/W
without heatsink compound
-
-
8.0
K/W
per diode
with heatsink compound
-
-
5.0
K/W
without heatsink compound
-
-
9.0
K/W
R
th j-a
Thermal resistance junction to
in free air
-
55
-
K/W
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 15 A; Tj = 150˚C
-
0.83
0.90
V
I
F = 15 A
-
0.95
1.05
V
I
F = 30 A
-
1.00
1.20
V
I
R
Reverse current
V
R = VRWM; Tj = 100 ˚C
-
0.5
1
mA
V
R = VRWM
-
10
100
µA
Q
s
Reverse recovery charge
I
F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-
6
15
nC
t
rr1
Reverse recovery time
I
F = 1 A; VR ≥ 30 V;
-
20
28
ns
-dI
F/dt = 100 A/µs
t
rr2
Reverse recovery time
I
F = 0.5 A to IR = 1 A; Irec = 0.25 A
-
13
22
ns
I
rrm
Peak reverse recovery current
I
F = 10 A; VR ≥ 30 V;
-
2
2.4
A
-dI
F/dt = 50 A/µs; Tj = 100˚C
V
fr
Forward recovery voltage
I
F = 1 A; dIF/dt = 10 A/µs-
1
-
V
October 1998
2
Rev 1.300



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