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BYV72F 数据表(PDF) 1 Page - NXP Semiconductors |
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BYV72F 数据表(HTML) 1 Page - NXP Semiconductors |
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1 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes BYV72F series ultrafast GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, high efficiency, SYMBOL PARAMETER MAX. MAX. MAX. UNIT dual, rectifier diodes in a full pack, plastic envelope, featuring low BYV72F- 100 150 200 forward voltage drop, ultra-fast V RRM Repetitive peak reverse 100 150 200 V recovery times and soft recovery voltage characteristic. They are intended for V F Forward voltage 0.90 0.90 0.90 V use in switched mode power supplies I O(AV) Output current (both 20 20 20 A and high frequency circuits in general diodes conducting) where low conduction and switching t rr Reverse recovery time 28 28 28 ns losses are essential. PINNING - SOT199 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -100 -150 -200 V RRM Repetitive peak reverse voltage - 100 150 200 V V RWM Crest working reverse voltage - 100 150 200 V V R Continuous reverse voltage 1 - 100 150 200 V I O(AV) Output current (both diodes square wave; δ = 0.5; - 20 A conducting) 2 T hs ≤ 78 ˚C sinusoidal; a = 1.57; - 20 A T hs ≤ 78 ˚C I O(RMS) RMS forward current - 20 A I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A per diode T hs ≤ 78 ˚C I FSM Non-repetitive peak forward t = 10 ms - 150 A current per diode t = 8.3 ms - 160 A sinusoidal; with reapplied V RWM(max) I 2tI2t for fusing t = 10 ms - 112 A 2s T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C 12 3 case k a1 a2 13 2 1 T hs ≤ 125˚C for thermal stability. 2 Neglecting switching and reverse current losses. October 1994 1 Rev 1.100 |
类似零件编号 - BYV72F |
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类似说明 - BYV72F |
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