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BYV72F 数据表(PDF) 1 Page - NXP Semiconductors

部件名 BYV72F
功能描述  Rectifier diodes ultrafast
PDF  6 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BYV72F 数据表(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
BYV72F series
ultrafast
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, high efficiency,
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
dual, rectifier diodes in a full pack,
plastic
envelope,
featuring
low
BYV72F-
100
150
200
forward
voltage
drop,
ultra-fast
V
RRM
Repetitive peak reverse
100
150
200
V
recovery times and soft recovery
voltage
characteristic. They are intended for
V
F
Forward voltage
0.90
0.90
0.90
V
use in switched mode power supplies
I
O(AV)
Output current (both
20
20
20
A
and high frequency circuits in general
diodes conducting)
where low conduction and switching
t
rr
Reverse recovery time
28
28
28
ns
losses are essential.
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-100
-150
-200
V
RRM
Repetitive peak reverse voltage
-
100
150
200
V
V
RWM
Crest working reverse voltage
-
100
150
200
V
V
R
Continuous reverse voltage
1
-
100
150
200
V
I
O(AV)
Output current (both diodes
square wave;
δ = 0.5;
-
20
A
conducting)
2
T
hs ≤ 78 ˚C
sinusoidal; a = 1.57;
-
20
A
T
hs ≤ 78 ˚C
I
O(RMS)
RMS forward current
-
20
A
I
FRM
Repetitive peak forward current t = 25
µs; δ = 0.5;
-
30
A
per diode
T
hs ≤ 78 ˚C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
150
A
current per diode
t = 8.3 ms
-
160
A
sinusoidal; with reapplied
V
RWM(max)
I
2tI2t for fusing
t = 10 ms
-
112
A
2s
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction temperature
-
150
˚C
12
3
case
k
a1
a2
13
2
1 T
hs ≤ 125˚C for thermal stability.
2 Neglecting switching and reverse current losses.
October 1994
1
Rev 1.100


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