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AT45DB021D-MU 数据表(PDF) 34 Page - ATMEL Corporation |
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AT45DB021D-MU 数据表(HTML) 34 Page - ATMEL Corporation |
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34 / 52 page ![]() 34 3638B–DFLASH–02/07 AT45DB021D [Preliminary] Table 18-4. AC Characteristics – RapidS/Serial Interface Symbol Parameter Min Typ Max Units f SCK SCK Frequency 66 MHz fCAR1 SCK Frequency for Continuous Array Read 66 MHz f CAR2 SCK Frequency for Continuous Array Read (Low Frequency) 33 MHz tWH SCK High Time 6.8 ns tWL SCK Low Time 6.8 ns t SCKR (1) SCK Rise Time, Peak-to-Peak (Slew Rate) 0.1 V/ns tSCKF (1) SCK Fall Time, Peak-to-Peak (Slew Rate) 0.1 V/ns tCS Minimum CS High Time 50 ns t CSS CS Setup Time 5 ns tCSH CS Hold Time 5 ns tSU Data In Setup Time 2 ns t H Data In Hold Time 3 ns tHO Output Hold Time 0 ns tDIS Output Disable Time 6ns t V Output Valid 6ns tWPE WP Low to Protection Enabled 1 µs tWPD WP High to Protection Disabled 1 µs t EDPD CS High to Deep Power-down Mode 3 µs tRDPD CS High to Standby Mode 30 µs t XFR Page to Buffer Transfer Time 400 µs t comp Page to Buffer Compare Time 400 µs tEP Page Erase and Programming Time (256/264 bytes) 14 35 ms t P Page Programming Time (256/264 bytes) 2 4 ms t PE Page Erase Time (256/264 bytes) 13 32 ms tBE Block Erase Time (2,048/2,112 bytes) 15 35 ms t SE Sector Erase Time (32,768/33,792 bytes) 0.8 2.5 s t CE Chip Erase Time TBD TBD s tRST RESET Pulse Width 10 µs t REC RESET Recovery Time 1µs |
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