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S8008DRP 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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S8008DRP 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 S8008DRP Thyristor Modules FEATURES · Long-term stability · Low Leakage Current · Base plate: Copper · Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VRRM VDRM Repetitive Peak Reverse Voltage Repetitive Peak Forward Blocking Voltage 800 V IT(AV) Average on-state current sin. 180; Tc = 85(100)℃ 5.1 A ITSM Peak, One-cycle, Non-repetitive Surge Current Tvj = 25℃; 10ms 83 A Tvj = 125℃; 10ms 100 I2t For Fusing Tvj = 25℃; 8,3 ...10ms 41 A2S TJ Junction Temperature -40~110 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.5 K/W |
类似零件编号 - S8008DRP |
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类似说明 - S8008DRP |
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