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BYW29F 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BYW29F
功能描述  Rectifier diodes ultrafast
PDF  6 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BYW29F 数据表(HTML) 2 Page - NXP Semiconductors

  BYW29F Datasheet HTML 1Page - NXP Semiconductors BYW29F Datasheet HTML 2Page - NXP Semiconductors BYW29F Datasheet HTML 3Page - NXP Semiconductors BYW29F Datasheet HTML 4Page - NXP Semiconductors BYW29F Datasheet HTML 5Page - NXP Semiconductors BYW29F Datasheet HTML 6Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
BYW29F series
ultrafast
ISOLATION
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from
R.H.
≤ 65% ; clean and dustfree
-
-
1500
V
both terminals to external
heatsink
C
isol
Capacitance from cathode to
f = 1 MHz
-
12
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
5.5
K/W
mounting base
without heatsink compound
-
-
7.2
K/W
R
th j-a
Thermal resistance junction to
in free air
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 8 A; Tj = 150˚C
-
0.80
0.895
V
I
F = 8 A
-
0.92
1.05
V
I
F = 20 A
-
1.1
1.3
V
I
R
Reverse current
V
R = VRWM; Tj = 100 ˚C
-
0.3
0.6
mA
V
R = VRWM
-
2
10
µA
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge
I
F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
-
4
11
nC
t
rr
Reverse recovery time
I
F = 1 A; VR ≥ 30 V;
-
20
25
ns
-dI
F/dt = 100 A/µs
I
rrm
Peak reverse recovery current
I
F = 10 A; VR ≥ 30 V; Tj = 100 ˚C;
-
1
2
A
-dI
F/dt = 50 A/µs
V
fr
Forward recovery voltage
I
F = 1 A; dIF/dt = 10 A/µs
-
1
-
V
October 1994
2
Rev 1.100



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