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BYX101G 数据表(PDF) 3 Page - NXP Semiconductors

部件名 BYX101G
功能描述  High-voltage soft-recovery controlled avalanche rectifiers
PDF  8 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BYX101G 数据表(HTML) 3 Page - NXP Semiconductors

  BYX101G Datasheet HTML 1Page - NXP Semiconductors BYX101G Datasheet HTML 2Page - NXP Semiconductors BYX101G Datasheet HTML 3Page - NXP Semiconductors BYX101G Datasheet HTML 4Page - NXP Semiconductors BYX101G Datasheet HTML 5Page - NXP Semiconductors BYX101G Datasheet HTML 6Page - NXP Semiconductors BYX101G Datasheet HTML 7Page - NXP Semiconductors BYX101G Datasheet HTML 8Page - NXP Semiconductors  
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2000 Jan 13
3
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifiers
BYX101G; BYX102G;
BYX103G; BYX104G
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. For more information please refer to the
“General Part of associated Handbook”.
PRSM
non-repetitive peak reverse power
dissipation
t=10
µs; triangular pulse;
Tj =Tj max prior to surge
4kW
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj = 165 °C
BYX101G
17.5
V
BYX102G
19.5
V
BYX103G
22.5
V
BYX104G
31
V
forward voltage
IF =1A
BYX101G
20.5
V
BYX102G
23.9
V
BYX103G
29.7
V
BYX104G
52
V
IR
reverse current
VR =VRWmax
15
µA
VR =VRWmax; Tj = 165 °C50
µA
trr
reverse recovery time
when switched from IF = 50 mA to
IR = 100 mA; measured at IR =25mA
BYX101G
600
ns
BYX102G
350
ns
BYX103G
175
ns
BYX104G
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-oil
thermal resistance from junction to oil
note 1
20
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT



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