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BZA109 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BZA109
功能描述  9-fold ESD transient voltage suppressor
PDF  12 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BZA109 数据表(HTML) 2 Page - NXP Semiconductors

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1997 Dec 01
2
Philips Semiconductors
Product specification
9-fold ESD transient voltage suppressor
BZA109
FEATURES
• ESD rating >8 kV, according to
IEC1000-4-2
• SOT163-1 surface mount package
• Common anode configuration
• Non-clamping range 0.5 to 6.8 V
• Maximum non-repetitive peak
reverse power dissipation: 25 W
at tp =1ms
• Maximum clamping voltage at peak
pulse current: 10 V at IZSM = 2.5 A.
APPLICATIONS
• For 9-bit wide undershoot/
overshoot clamping and fast ESD
transient suppression in:
– Computers and peripherals
– Audio and video equipment
– Business machines
– Communication systems
– Medical equipment.
DESCRIPTION
9-fold monolithic transient voltage
suppressor in an SO20; SOT163-1
surface mount package. The device is
ideal in situations where board space
is a premium.
PINNING
PIN
DESCRIPTION
1 to 5
input (IN1 to IN5)
6 and 15
common anode (GND)
7 to 10
input (IN6 to IN9)
11 to 14
output (OUT9 to OUT6)
16 to 20
output (OUT5 to OUT1)
Fig.1 Pin configuration for SO20 (SOT163-1) and symbol.
handbook, 4 columns
SO20
MBK268
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
19
18
17
16
15
14
13
12
11
20
2
3
4
5
6
7
8
9
10
1
OUT1
IN1
OUT2
IN2
OUT3
IN3
OUT4
IN4
OUT5
IN5
GND
GND
OUT6
IN6
OUT7
IN7
OUT8
IN8
OUT9
IN9
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Current is flowing from input to corresponding output.
2. One or more diodes loaded.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
IZ
working current
Tamb =25 °C
−
20
mA
IF
continuous forward current
Tamb =25 °C
−
100
mA
IFT
feed-through current
Tamb =25 °C; note 1
−
100
mA
IFSM
non-repetitive peak forward current
tp = 1 ms; square pulse
−
4.5
A
IZSM
non-repetitive peak reverse current
tp = 1 ms; square pulse; see Fig.2
−
2.5
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2; see Fig.3
−
1.25
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 1 ms; square pulse; see Fig.4
−
25
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−65
+150
°C



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