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STL42P6LLF6 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 STL42P6LLF6
功能描述  isc P-Channel MOSFET Transistor
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

STL42P6LLF6 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  STL42P6LLF6 Datasheet HTML 1Page - Inchange Semiconductor Company Limited STL42P6LLF6 Datasheet HTML 2Page - Inchange Semiconductor Company Limited STL42P6LLF6 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc P-Channel MOSFET Transistor
STL42P6LLF6
www.iscsemi.com
2023-9-6
22
Electrical Characteristics (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID=-0.25mA
-60
--
--
V
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID=-0.25mA
-1
--
-2.5
V
RDS(ON)
Drain-Source On-stage Resistance
VGS-=10V; ID=-4.5A
--
23
26
m
RDS(ON)
Drain-Source On-stage Resistance
VGS=-4.5V; ID=-4.5A
--
28
34
m
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
--
--
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=-60V; VGS=0
--
--
-1
uA
gFS
Forward Transconductanc
VGS-=-5V; ID=-20A
--
61
--
S
RG
Gate resistance
f = 1.0MHz
--
8.9
--
Ciss
Input Capacitance
VGS = 0V,
VDS =- 30V,
f = 1.0MHz
--
4967
--
pF
Coss
Output Capacitance
--
234
--
Crss
Reverse Transfer Capacitance
--
178
--
Qg
Total Gate Charge
VDD = -30V,
ID = -20A,
VGS = -10V
--
98
--
nC
Qgs
Gate-Source Charge
--
19
--
Qgd
Gate-Drain Charge
--
16
--
td(on)
Turn-on Delay Time
VGS=-10V,
VDS=-30V,
RL=1.5Ω
RGEN=3Ω
--
12
--
ns
tr
Turn-on Rise Time
--
61
--
td(off)
Turn-off Delay Time
--
160
--
tf
Turn-off Fall Time
--
137
--
Drain - Source Body Diode Characteristics
ISD
Continuous Source Current
Tc = 25 ºC
--
--
-35
A
VSD
Diode Forward Voltage
VGS=0V,IS=-1A
--
--
-1.0
V
trr
Reverse Recovery Time
IF=-20A, dIF/dt=100A/ms
--
37
--
ns
Qrr
Reverse Recovery Charge
--
35
--
nC



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