Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Standard (4 quadrants)

Symbol

Parameters

Quadrant

Value

Unit

IGT(1)

VD = 12 V, RL = 33 Ω

I - II - III

IV

Max.

50

100

mA

VGT

All

Max.

1.3

V

VGD

VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C

All

Min.

0.2

V

IH(2)

IT = 500 mA

Max.

80

mA

IL

IG = 1.2 IGT

I - III - IV

Max.

70

mA

II

Max.

160

dV/dt(2)

VD = 67 % VDRM gate open, Tj = 125 °C

Min.

500

V/µs

(dV/dt)c(2)

(dI/dt)c = 13.3 A/ms, Tj = 125 °C

Min.

10

V/µs

1. Minimum IGT is guaranteed at 5 % of IGT max.

2. For both polarities of A2 referenced to A1

Table 4. Static electrical characteristics

Symbol

Test conditions

Tj

Value

Unit

VTM(1)

ITM = 35 A, tp = 380 µs

25 °C

Max.

1.55

V

VTO(1)

threshold on-state voltage

125 °C

Max.

0.85

V

RD(1)

Dynamic resistance

125 °C

Max.

16

mΩ

IDRM/IRRM

VT = VDRM, VT = VRRM

25 °C

Max.

5

µA

125 °C

3

mA

1. For both polarities of A2 referenced to A1

Table 5. Thermal resistance

Symbol

Parameters

Value

Unit

Rth(j-c)

Junction to case (AC)

BTA26 (TOP3 Ins.)

Max.

0.9

°C/W

BTB26 (TOP3)

0.6

Rth(j-a)

Junction to ambient

BTA26 (TOP3 Ins.) / BTB26 (TOP3)

Typ.

50

BTA26, BTB26

Characteristics

DS13701 - Rev 1

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