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ESD3.3V08P-LC 数据表(PDF) 2 Page - UN Semiconducctor INC |
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ESD3.3V08P-LC 数据表(HTML) 2 Page - UN Semiconducctor INC |
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2 / 4 page ![]() Characteristic Curves Fig2. Power Rating Derating Curve Fig1. 8/20μs Pulse Waveform Fig3. ESD Pulse Waveform(according to IEC61000-4-2) ROHS Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Electrical Characteristics @ 25℃ Unless Otherwise Specified ) Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 2/3 ESD3.3V08P-LC Transient Voltage Suppressors for ESD Protection 0 25 50 75 100 125 150 110 100 40 30 20 10 0 90 80 70 60 50 Ambient Temperature – TA (ºC) 0 5 10 15 20 25 30 120 tr 100 80 60 40 Peak Value IPP 20 0 td=t IPP/2 TEST WAVEFORM PARAMETERS tr=8μs td=20μs t - Time (μs) 100% 90% 10% tr 30ns = Time 60ns VRWM VBR IR VC CJ Reverse Working Voltage Reverse Breakdown Voltage Reverse Leakage Current Positive Clamping Voltage Junction capacitance -- IT=1mA; VRWM =3.3 V, T=25°C; IPP =1 A, TP =8/20μs; IPP =1.5 A, TP =8/20μs; VR = 0V, f = 1MHz; -- 4.5 -- -- -- -- -- -- -- -- -- 0.5 3.3 -- 0.1 12 15 -- V V μA V V pF Characteristics Symbol Test Conditions Typ. Max Unit Min. |
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