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BZV90-C18 数据表(PDF) 4 Page - NXP Semiconductors |
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BZV90-C18 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() 22 20.8 23.3 20 55 16.4 18.4 20.0 5 60 0.05 15.4 1.25 24 22.8 25.6 25 70 18.4 20.4 22.0 5 55 0.05 16.8 1.25 27 25.0 28.9 25 80 21.4 23.4 25.3 2 50 0.05 18.9 1.0 30 28.0 32.0 30 80 24.4 26.6 29.4 2 50 0.05 21.0 1.0 33 31.0 35.0 35 80 27.4 29.7 33.4 2 45 0.05 23.1 0.9 36 34.0 38.0 35 90 30.4 33.0 37.4 2 45 0.05 25.2 0.8 39 37.0 41.0 40 130 33.4 36.4 41.2 2 45 0.05 27.3 0.7 43 40.0 46.0 45 150 37.6 41.2 46.6 2 40 0.05 30.1 0.6 47 44.0 50.0 50 170 42.0 46.1 51.8 2 40 0.05 32.9 0.5 51 48.0 54.0 60 180 46.6 51.0 57.2 2 40 0.05 35.7 0.4 56 52.0 60.0 70 200 52.2 57.0 63.8 2 40 0.05 39.2 0.3 62 58.0 66.0 80 215 58.8 64.4 71.6 2 35 0.05 43.4 0.3 68 64.0 72.0 90 240 65.6 71.7 79.8 2 35 0.05 47.6 0.25 75 70.0 79.0 95 255 73.4 80.2 88.6 2 35 0.05 52.5 0.2 BZV90- CXXX WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR =0V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb =25 °C IR (µA) VR (V) MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX. |
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