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ISCF8006 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 ISCF8006
功能描述  SiC N-Channel MOSFET
PDF  6 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCF8006 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCF8006 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCF8006 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISCF8006 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISCF8006 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISCF8006 Datasheet HTML 5Page - Inchange Semiconductor Company Limited ISCF8006 Datasheet HTML 6Page - Inchange Semiconductor Company Limited  
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ISCF8006
eq C3M0060065K
SiC N-Channel MOSFET
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0
℃
/W
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0V; ID= 0.1mA
650
--
--
V
VGS(th)
Gate Threshold Voltage
VDS = 10V, ID = 5mA
1.8
--
3.6
V
RDS(ON)
Drain-Source On-stage Resistance
VGS= 15V; ID=13.2A
42
60
79
mΩ
IGSS
Gate Source Leakage Current
VGS= 15V; VDS= 0V
--
--
250
nA
IDSS
Zero Gate Voltage Drain Current
VDS = 650V; VGS = 0V
--
1
50
μA
Ciss
Input Capacitance
VGS = 0V,
VDS = 600V,
f = 1.0MHz
VAC=25mV
--
920
--
pF
Coss
Output Capacitance
--
81
--
Crss
Reverse Transfer Capacitance
--
12
--
Qg
Total Gate Charge
VDD=400V,
ID= 13.2A,
VGS= - 4to +15V
--
49
--
nC
Qgs
Gate-Source Charge
--
13
--
Qgd
Gate-Drain Charge
--
14
--
td(on)
Turn-on Delay Time
VGS= - 4to +15V
ID= 13.2A,
VDS=400V,
Rg=2.5Ω,
L=135uH
inductive load
--
8
--
ns
tr
Turn-on Rise Time
--
10
--
td(off)
Turn-off Delay Time
--
20
--
tf
Turn-off Fall Time
--
8
--



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