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ULC33CDQ 数据表(PDF) 2 Page - UN Semiconducctor INC |
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ULC33CDQ 数据表(HTML) 2 Page - UN Semiconducctor INC |
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2 / 4 page ![]() Characteristic Curves Fig2. Power Rating Derating Curve ROHS Revision March 1,2022 www.unsemi.com.tw For technical questions, contact: tech@unsemi.com.tw ROHS Electrical Characteristics @25℃ Unless Otherwise Specified ) Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. 2/3 ULC33CDQ Transient Voltage Suppressors for ESD Protection Fig3. ESD Pulse Waveform(According to IEC61000-4-2) Fig1. 8/20μs Pulse Waveform VRWM VBR IR CJ VC Reverse Working Voltage Reverse Breakdown Voltage Reverse Leakage Current Junction capacitance Positive Clamping Voltage -- IT=1mA VRWM = 3.3V, T= 25°C VR = 0V, f = 1MHz IPP = 1.0 A, TP = 8/20μs IPP = 4.0 A, TP = 8/20μs -- 4.0 -- -- -- -- -- -- -- 0.25 -- -- 3.3 -- 0.1 -- 13 22 V V μA pF V V Characteristics Symbol Test Conditions Typ. Max. Unit Min. 0 5 10 15 20 25 30 120 tr 100 80 60 40 Peak Value IPP 20 0 td=t IPP/2 TEST WAVEFORM PARAMETERS tr=8μs td=20μs t - Time (μs) 0 25 50 75 100 125 150 110 100 40 30 20 10 0 90 80 70 60 50 Ambient Temperature – TA (ºC) 100% 90% 10% tr 30ns = Time 60ns |
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